Quantum

Delta-Doped GeV$^-$ in diamond with isotope resolvable optical spectra

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Based on a feed excerpt; full article content has not been acquired. Source evidence retrieved 23/10/2026, 04:13:24 UTC.

Briefings

A new study reports the creation of germanium-vacancy (GeV$^-$) centers in diamond with a sheet density of 0.12 per square micrometer, achieved via timed GeH$_4$ injection during plasma chemical vapor deposition. This method produces a strain-free environment and minimal damage, enabling isotopic spectral resolution with a best cluster linewidth of 47 MHz. The research establishes a yield of at least 90% and sets a lower bound for spin coherence time of 730 ns, offering insights into athermal formation dynamics.

Key points

• GeV$^-$ centers were localized to a <10 nm layer using timed GeH$_4$ injection during microwave plasma chemical vapor deposition.
• The resulting sheet density of 0.12 GeV$^-/$\mu$m$^2$ enables isotopic spectral resolution with a best cluster linewidth of 47 MHz.

Context

Group IV color centers in diamond are critical for quantum networking, but ion implantation causes damage-induced strain inhomogeneity. This study addresses deterministic placement and damage reduction in GeV$^-$ generation.

Limitations

Evidence is preprint status (arXiv:2610.30375v1) with no experimental validation. Spin coherence time is limited by paramagnetic defects, and yield estimates are lower bounds.

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