Science

A new superinductor created within a silicon integrated circuit

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Based on a feed excerpt; full article content has not been acquired. Source evidence retrieved 04/11/2026, 22:55:25 UTC.

Briefings

A research team from four UK institutions successfully integrated a superinductor directly into a silicon integrated circuit using a standard CMOS fabrication process. This achievement enables high-frequency electronic applications previously limited by the physical size of inductors. The study was published in Nature Electronics on November 4, 2026, and represents a significant step toward miniaturizing power management components for advanced computing.

Key points

• Researchers from nanoGUNE, Quantum Motion, London Center for Nanotechnology, Imperial College London, and the University of Cambridge developed a superinductor embedded within a silicon integrated circuit.
• The device was fabricated using a commercial complementary metal-oxide-semiconductor (CMOS) process, allowing for integration with existing semiconductor manufacturing infrastructure.

Context

This breakthrough allows for the miniaturization of inductors, which are critical for high-frequency electronics. Previous limitations required bulky components, making this a key advancement for next-generation computing and communication technologies.

Limitations

The study is a preprint from Nature Electronics and does not yet include peer-reviewed validation or long-term reliability testing. Specific performance metrics, such as inductance values and operating frequencies, are not provided in the available evidence.

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